Avtech offers a range of solutions for semiconductor test requirements. Avtech can supply products suitable for many test requirments, including:
|
 |
 |
Avtech can also provide specialized test jigs designed to minimize parasitic inductance, while providing ease-of-use and safety for the operator. "One of a kind" applications can be accommodated at "near stock" prices. Contact Avtech with your special requirements! The instruments listed below are particularly suitable for certain semiconductor test requirements, but other models may also be of interest. Our knowledgeable application engineers can guide you to the most suitable model. All models with the "-B" suffix include IEEE-488.2 GPIB and RS-232 ports, for easy test automation. The basic command set is SCPI compliant, for easu of use. Visit our Application Notes" area for further assistance. See |
 |
Reverse Recovery Test Systems
| Product | Amplitude (max) | + to - transition | PW | Max. PRF | Typical Application |
|---|---|---|---|---|---|
| AVR-EB2A-B pulse generator | +/- 100 mA | ≤ 0.5 ns | 200 ns | 10 kHz | Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition A) for low current diodes |
| AVR-EB2J-B pulse generator | +/- 100 mA | ≤ 1.5 ns | 200 ns | 10 kHz | Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition A) for low current diodes |
| AVR-EB4-B pulse generator | +2A / -4A | ≤ 4.5 ns | 2-20 us | 100 Hz | Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition B) for medium current diodes |
| AVR-EB5-B pulse generator | +4A / -4A | ≤ 100 ns | 0.2-1 ms | 10 Hz | Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition B) for PIN diode lifetime characterization |
| AVR-EB7-B pulse generator | +200mA / -200mA | ≤ 2.5 ns | 200 ns | 5 kHz | Reverse Recovery Time Tests (MIL-STD-750-4 Method 4031.4 Condition B) for small-signal diodes |
Forward Recovery Time Test Systems
| Product | Amplitude (max) | transition time | PW | Max. PRF | Typical Application |
|---|---|---|---|---|---|
| AVR-EBF6-B pulse generator | +1A | 10 ns | 0.2 - 10 us | 10 kHz | Forward Recovery Time Tests (MIL-STD-750-4 Method 4026.3) |
Optocoupler and Phototriac CMTI & dV/dt Test Systems
| Product | Amplitude (max) | transition time | PW | Max. PRF | Typical Application |
|---|---|---|---|---|---|
| AVR-DV1-B pulse generator | 1000 V | 125ns - 1.1us (1%-63.2%) | 200 ns to 200us | 1 kHz | Phototriac dV/dt tests |
| AVRQ-4-B pulse generator | 1500 V | 20 to 500 ns | 1 - 20 us | 10 Hz | Optocoupler common-mode transient immunity (CMTI) tests |
| AVRQ-5-B pulse generator | 1500 V | 10 to 50 ns | 1 - 20 us | 10 Hz | Optocoupler common-mode transient immunity (CMTI) tests |
Transistor and Other Test Systems
| Product | Amplitude (max) | transition time | PW | Max. PRF | Typical Application |
|---|---|---|---|---|---|
| AVR-E1-W-B pulse generator | 20 V | 0.3 ns | 0.1 - 5 us | 20 kHz | Very-high-speed switching tests |
| AVR-D2-B pulse generator | 30V (40V opt) | 1.5ns (1.0ns opt) | 0.2 - 20 us | 50 kHz | High-Speed Bipolar Transistor Switching Time Tests (MIL-PRF-19500, MIL-STD-750-3 Method 3251.1) |
| AVR-D3-B pulse generator | 250V / 5A | 20 ns | 10 - 300 us | 10 Hz | High-Power Bipolar Transistor Switching Time Tests (MIL-PRF-19500, MIL-STD-750-3 Method 3251.1) |
| AVR-D4-B pulse generator | 225V / 40A | 10 ns | 0.5 - 2 us | 100 Hz | High-Power MOSFET Switching Time Tests (MIL-PRF-19500, MIL-STD-750-3 Method 3472.2) |
| AVI-V-B pulse generator | 50 V | 0.35 ns | 2 - 100 ns | 20 kHz | Very-high-speed switching tests |
| AV-1010-B pulse generator | 100 V | 10 ns | 20 ns - 10 ms | 1 MHz | General purpose testing |
Test Jigs
| Product | Packages | Test Type | Use With |
|---|---|---|---|
| AVX-TRR-ANB | DO-41, Microsemi Type E | Reverse Recovery Time | AVR-EB4-B, AVR-EB5-B, AVR-EB7-B |
| AVX-TRR-AR1 | Axial (DO-41, Microsemi Type E) and SQMELF (D-5A, D-5B, D-5D) |
Reverse Recovery Time | AVR-EB4-B, AVR-EB5-B, AVR-EB7-B |
| AVX-TRR-MIX | DO-41, Microsemi Type E, TO-220, TO-3, other | Reverse Recovery Time | AVR-EB4-B, AVR-EB5-B, AVR-EB7-B |
| AVX-TRR-MELF | MELF (SMT) | Reverse Recovery Time | AVR-EB4-B, AVR-EB5-B, AVR-EB7-B |
| AVX-TRR-SQMELF | Square-ended MELF (SMT) | Reverse Recovery Time | AVR-EB4-B, AVR-EB5-B, AVR-EB7-B |
| AVX-TRR-STUD | DO-4, DO-5 stud | Reverse Recovery Time | AVR-EB4-B, AVR-EB5-B, AVR-EB7-B |
| AVX-TFR-ANB | DO-41, Microsemi Type E | Forward Recovery Time | AVR-EBF6-B |
| AVX-TFR-AR1 | Axial (DO-41, Microsemi Type E) and SQMELF (D-5A, D-5B, D-5D) |
Forward Recovery Time | AVR-EBF6-B |
| AVX-TFR-MIX | DO-41, Microsemi Type E, TO-220, TO-3, other | Forward Recovery Time | AVR-EBF6-B |
| AVX-TFR-MELF | MELF (SMT) | Forward Recovery Time | AVR-EBF6-B |
| AVX-TFR-SQMELF | Square-ended MELF (SMT) | Forward Recovery Time | AVR-EBF6-B |
| AVX-TFR-STUD | DO-4, DO-5 stud | Forward Recovery Time | AVR-EBF6-B |
Plus Many More...
The test systems listed above are models that are tightly bound to specialized semiconductor test requirements (such as those outlined in MIL-STD-750). Many other models are also available which are suitable for general semiconductor test applications. Contact us if you can't find what you need!
Please see these resources for more information:
- The AVR-EB4-B manuals contain results for reverse recovery tests on a variety of diodes.
- TB2 ~ How to Deliver a Fast 2 Amp Pulse to a Diode in a Probing Station
- TB15 ~ A Comparison of Reverse Recovery Measurement Systems
- TB16 ~ The Importance of Minimizing Parasitic Inductance in Forward Recovery Measurement Systems
- AN-1A ~ AV-1010 and AV-1015 Pulse Generator Applications
- AN-2A ~ General Applications Information
