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-rw-r--r--arch/arm/include/asm/arch-sunxi/dram.h6
-rw-r--r--arch/arm/include/asm/arch-sunxi/dram_sunxi_dw.h (renamed from arch/arm/include/asm/arch-sunxi/dram_sun8i_h3.h)36
2 files changed, 35 insertions, 7 deletions
diff --git a/arch/arm/include/asm/arch-sunxi/dram.h b/arch/arm/include/asm/arch-sunxi/dram.h
index f452f889f9..80abac95b8 100644
--- a/arch/arm/include/asm/arch-sunxi/dram.h
+++ b/arch/arm/include/asm/arch-sunxi/dram.h
@@ -24,10 +24,8 @@
#include <asm/arch/dram_sun8i_a33.h>
#elif defined(CONFIG_MACH_SUN8I_A83T)
#include <asm/arch/dram_sun8i_a83t.h>
-#elif defined(CONFIG_MACH_SUNXI_H3_H5) || \
- defined(CONFIG_MACH_SUN8I_R40) || \
- defined(CONFIG_MACH_SUN50I)
-#include <asm/arch/dram_sun8i_h3.h>
+#elif defined(CONFIG_SUNXI_DRAM_DW)
+#include <asm/arch/dram_sunxi_dw.h>
#elif defined(CONFIG_MACH_SUN9I)
#include <asm/arch/dram_sun9i.h>
#else
diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun8i_h3.h b/arch/arm/include/asm/arch-sunxi/dram_sunxi_dw.h
index 2770986b61..03fd46b724 100644
--- a/arch/arm/include/asm/arch-sunxi/dram_sun8i_h3.h
+++ b/arch/arm/include/asm/arch-sunxi/dram_sunxi_dw.h
@@ -53,9 +53,9 @@ struct sunxi_mctl_com_reg {
#define MCTL_CR_SEQUENTIAL (0x1 << 15)
#define MCTL_CR_INTERLEAVED (0x0 << 15)
-#define MCTL_CR_32BIT (0x1 << 12)
-#define MCTL_CR_16BIT (0x0 << 12)
-#define MCTL_CR_BUS_WIDTH(x) ((x) == 32 ? MCTL_CR_32BIT : MCTL_CR_16BIT)
+#define MCTL_CR_FULL_WIDTH (0x1 << 12)
+#define MCTL_CR_HALF_WIDTH (0x0 << 12)
+#define MCTL_CR_BUS_FULL_WIDTH(x) ((x) << 12)
#define MCTL_CR_PAGE_SIZE(x) ((fls(x) - 4) << 8)
#define MCTL_CR_ROW_BITS(x) (((x) - 1) << 4)
@@ -205,4 +205,34 @@ struct sunxi_mctl_ctl_reg {
#define DXBDLR_WRITE_DELAY(x) ((x) << 8)
#define DXBDLR_READ_DELAY(x) ((x) << 0)
+/*
+ * The delay parameters below allow to allegedly specify delay times of some
+ * unknown unit for each individual bit trace in each of the four data bytes
+ * the 32-bit wide access consists of. Also three control signals can be
+ * adjusted individually.
+ */
+#define BITS_PER_BYTE 8
+#define NR_OF_BYTE_LANES (32 / BITS_PER_BYTE)
+/* The eight data lines (DQn) plus DM, DQS and DQSN */
+#define LINES_PER_BYTE_LANE (BITS_PER_BYTE + 3)
+struct dram_para {
+ u16 page_size;
+ u8 bus_full_width;
+ u8 dual_rank;
+ u8 row_bits;
+ u8 bank_bits;
+ const u8 dx_read_delays[NR_OF_BYTE_LANES][LINES_PER_BYTE_LANE];
+ const u8 dx_write_delays[NR_OF_BYTE_LANES][LINES_PER_BYTE_LANE];
+ const u8 ac_delays[31];
+};
+
+static inline int ns_to_t(int nanoseconds)
+{
+ const unsigned int ctrl_freq = CONFIG_DRAM_CLK / 2;
+
+ return DIV_ROUND_UP(ctrl_freq * nanoseconds, 1000);
+}
+
+void mctl_set_timing_params(uint16_t socid, struct dram_para *para);
+
#endif /* _SUNXI_DRAM_SUN8I_H3_H */