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-rw-r--r--arch/arm/include/asm/arch-sunxi/dram_sun50i_h6.h35
1 files changed, 35 insertions, 0 deletions
diff --git a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h6.h b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h6.h
index eeb4da5c3f..0a1da02376 100644
--- a/arch/arm/include/asm/arch-sunxi/dram_sun50i_h6.h
+++ b/arch/arm/include/asm/arch-sunxi/dram_sun50i_h6.h
@@ -9,6 +9,8 @@
#ifndef _SUNXI_DRAM_SUN50I_H6_H
#define _SUNXI_DRAM_SUN50I_H6_H
+#include <stdbool.h>
+
enum sunxi_dram_type {
SUNXI_DRAM_TYPE_DDR3 = 3,
SUNXI_DRAM_TYPE_DDR4,
@@ -16,6 +18,11 @@ enum sunxi_dram_type {
SUNXI_DRAM_TYPE_LPDDR3,
};
+static inline bool sunxi_dram_is_lpddr(int type)
+{
+ return type >= SUNXI_DRAM_TYPE_LPDDR2;
+}
+
/*
* The following information is mainly retrieved by disassembly and some FPGA
* test code of sun50iw3 platform.
@@ -286,6 +293,32 @@ check_member(sunxi_mctl_phy_reg, dx[3].reserved_0xf0, 0xaf0);
#define DCR_DDR3 (3 << 0)
#define DCR_DDR4 (4 << 0)
#define DCR_DDR8BANK BIT(3)
+#define DCR_DDR2T BIT(28)
+
+/*
+ * The delay parameters allow to allegedly specify delay times of some
+ * unknown unit for each individual bit trace in each of the four data bytes
+ * the 32-bit wide access consists of. Also three control signals can be
+ * adjusted individually.
+ */
+#define NR_OF_BYTE_LANES (32 / BITS_PER_BYTE)
+/* The eight data lines (DQn) plus DM, DQS, DQS/DM/DQ Output Enable and DQSN */
+#define WR_LINES_PER_BYTE_LANE (BITS_PER_BYTE + 4)
+/*
+ * The eight data lines (DQn) plus DM, DQS, DQS/DM/DQ Output Enable, DQSN,
+ * Termination and Power down
+ */
+#define RD_LINES_PER_BYTE_LANE (BITS_PER_BYTE + 6)
+struct dram_para {
+ u32 clk;
+ enum sunxi_dram_type type;
+ u8 cols;
+ u8 rows;
+ u8 ranks;
+ const u8 dx_read_delays[NR_OF_BYTE_LANES][RD_LINES_PER_BYTE_LANE];
+ const u8 dx_write_delays[NR_OF_BYTE_LANES][WR_LINES_PER_BYTE_LANE];
+};
+
static inline int ns_to_t(int nanoseconds)
{
@@ -294,4 +327,6 @@ static inline int ns_to_t(int nanoseconds)
return DIV_ROUND_UP(ctrl_freq * nanoseconds, 1000);
}
+void mctl_set_timing_params(struct dram_para *para);
+
#endif /* _SUNXI_DRAM_SUN50I_H6_H */