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-rw-r--r--include/linux/mtd/mtd-abi.h48
-rw-r--r--include/linux/mtd/mtd.h34
-rw-r--r--include/linux/mtd/nand.h44
3 files changed, 63 insertions, 63 deletions
diff --git a/include/linux/mtd/mtd-abi.h b/include/linux/mtd/mtd-abi.h
index afe96b59cb..3d1d416810 100644
--- a/include/linux/mtd/mtd-abi.h
+++ b/include/linux/mtd/mtd-abi.h
@@ -1,7 +1,7 @@
/*
* $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $
*
- * Portions of MTD ABI definition which are shared by kernel and user space
+ * Portions of MTD ABI definition which are shared by kernel and user space
*/
#ifndef __MTD_ABI_H__
@@ -27,17 +27,17 @@ struct mtd_oob_buf {
#define MTD_OTHER 14
#define MTD_UNKNOWN 15
-#define MTD_CLEAR_BITS 1 // Bits can be cleared (flash)
-#define MTD_SET_BITS 2 // Bits can be set
-#define MTD_ERASEABLE 4 // Has an erase function
-#define MTD_WRITEB_WRITEABLE 8 // Direct IO is possible
-#define MTD_VOLATILE 16 // Set for RAMs
-#define MTD_XIP 32 // eXecute-In-Place possible
-#define MTD_OOB 64 // Out-of-band data (NAND flash)
-#define MTD_ECC 128 // Device capable of automatic ECC
-#define MTD_NO_VIRTBLOCKS 256 // Virtual blocks not allowed
+#define MTD_CLEAR_BITS 1 /* Bits can be cleared (flash) */
+#define MTD_SET_BITS 2 /* Bits can be set */
+#define MTD_ERASEABLE 4 /* Has an erase function */
+#define MTD_WRITEB_WRITEABLE 8 /* Direct IO is possible */
+#define MTD_VOLATILE 16 /* Set for RAMs */
+#define MTD_XIP 32 /* eXecute-In-Place possible */
+#define MTD_OOB 64 /* Out-of-band data (NAND flash) */
+#define MTD_ECC 128 /* Device capable of automatic ECC */
+#define MTD_NO_VIRTBLOCKS 256 /* Virtual blocks not allowed */
-// Some common devices / combinations of capabilities
+/* Some common devices / combinations of capabilities */
#define MTD_CAP_ROM 0
#define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)
#define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE)
@@ -45,31 +45,31 @@ struct mtd_oob_buf {
#define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS)
-// Types of automatic ECC/Checksum available
-#define MTD_ECC_NONE 0 // No automatic ECC available
-#define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip
-#define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices
+/* Types of automatic ECC/Checksum available */
+#define MTD_ECC_NONE 0 /* No automatic ECC available */
+#define MTD_ECC_RS_DiskOnChip 1 /* Automatic ECC on DiskOnChip */
+#define MTD_ECC_SW 2 /* SW ECC for Toshiba & Samsung devices */
/* ECC byte placement */
-#define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended)
-#define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode)
-#define MTD_NANDECC_AUTOPLACE 2 // Use the default placement scheme
-#define MTD_NANDECC_PLACEONLY 3 // Use the given placement in the structure (Do not store ecc result on read)
-#define MTD_NANDECC_AUTOPL_USR 4 // Use the given autoplacement scheme rather than using the default
+#define MTD_NANDECC_OFF 0 /* Switch off ECC (Not recommended) */
+#define MTD_NANDECC_PLACE 1 /* Use the given placement in the structure (YAFFS1 legacy mode) */
+#define MTD_NANDECC_AUTOPLACE 2 /* Use the default placement scheme */
+#define MTD_NANDECC_PLACEONLY 3 /* Use the given placement in the structure (Do not store ecc result on read) */
+#define MTD_NANDECC_AUTOPL_USR 4 /* Use the given autoplacement scheme rather than using the default */
struct mtd_info_user {
uint8_t type;
uint32_t flags;
- uint32_t size; // Total size of the MTD
+ uint32_t size; /* Total size of the MTD */
uint32_t erasesize;
- uint32_t oobblock; // Size of OOB blocks (e.g. 512)
- uint32_t oobsize; // Amount of OOB data per block (e.g. 16)
+ uint32_t oobblock; /* Size of OOB blocks (e.g. 512) */
+ uint32_t oobsize; /* Amount of OOB data per block (e.g. 16) */
uint32_t ecctype;
uint32_t eccsize;
};
struct region_info_user {
- uint32_t offset; /* At which this region starts,
+ uint32_t offset; /* At which this region starts,
* from the beginning of the MTD */
uint32_t erasesize; /* For this region */
uint32_t numblocks; /* Number of blocks in this region */
diff --git a/include/linux/mtd/mtd.h b/include/linux/mtd/mtd.h
index 9ef4cced5e..13e90803a1 100644
--- a/include/linux/mtd/mtd.h
+++ b/include/linux/mtd/mtd.h
@@ -1,4 +1,4 @@
-/*
+/*
* $Id: mtd.h,v 1.56 2004/08/09 18:46:04 dmarlin Exp $
*
* Copyright (C) 1999-2003 David Woodhouse <dwmw2@infradead.org> et al.
@@ -46,7 +46,7 @@ struct mtd_erase_region_info {
struct mtd_info {
u_char type;
u_int32_t flags;
- u_int32_t size; // Total size of the MTD
+ u_int32_t size; /* Total size of the MTD */
/* "Major" erase size for the device. Naïve users may take this
* to be the only erase size available, or may use the more detailed
@@ -54,25 +54,25 @@ struct mtd_info {
*/
u_int32_t erasesize;
- u_int32_t oobblock; // Size of OOB blocks (e.g. 512)
- u_int32_t oobsize; // Amount of OOB data per block (e.g. 16)
- u_int32_t oobavail; // Number of bytes in OOB area available for fs
+ u_int32_t oobblock; /* Size of OOB blocks (e.g. 512) */
+ u_int32_t oobsize; /* Amount of OOB data per block (e.g. 16) */
+ u_int32_t oobavail; /* Number of bytes in OOB area available for fs */
u_int32_t ecctype;
u_int32_t eccsize;
-
- // Kernel-only stuff starts here.
+
+ /* Kernel-only stuff starts here. */
char *name;
int index;
- // oobinfo is a nand_oobinfo structure, which can be set by iotcl (MEMSETOOBINFO)
+ /* oobinfo is a nand_oobinfo structure, which can be set by iotcl (MEMSETOOBINFO) */
struct nand_oobinfo oobinfo;
/* Data for variable erase regions. If numeraseregions is zero,
- * it means that the whole device has erasesize as given above.
+ * it means that the whole device has erasesize as given above.
*/
int numeraseregions;
- struct mtd_erase_region_info *eraseregions;
+ struct mtd_erase_region_info *eraseregions;
/* This really shouldn't be here. It can go away in 2.5 */
u_int32_t bank_size;
@@ -95,10 +95,10 @@ struct mtd_info {
int (*read_oob) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
int (*write_oob) (struct mtd_info *mtd, loff_t to, size_t len, size_t *retlen, const u_char *buf);
- /*
- * Methods to access the protection register area, present in some
+ /*
+ * Methods to access the protection register area, present in some
* flash devices. The user data is one time programmable but the
- * factory data is read only.
+ * factory data is read only.
*/
int (*read_user_prot_reg) (struct mtd_info *mtd, loff_t from, size_t len, size_t *retlen, u_char *buf);
@@ -109,14 +109,14 @@ struct mtd_info {
#if 0
/* kvec-based read/write methods. We need these especially for NAND flash,
with its limited number of write cycles per erase.
- NB: The 'count' parameter is the number of _vectors_, each of
+ NB: The 'count' parameter is the number of _vectors_, each of
which contains an (ofs, len) tuple.
*/
int (*readv) (struct mtd_info *mtd, struct kvec *vecs, unsigned long count, loff_t from, size_t *retlen);
- int (*readv_ecc) (struct mtd_info *mtd, struct kvec *vecs, unsigned long count, loff_t from,
+ int (*readv_ecc) (struct mtd_info *mtd, struct kvec *vecs, unsigned long count, loff_t from,
size_t *retlen, u_char *eccbuf, struct nand_oobinfo *oobsel);
int (*writev) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to, size_t *retlen);
- int (*writev_ecc) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to,
+ int (*writev_ecc) (struct mtd_info *mtd, const struct kvec *vecs, unsigned long count, loff_t to,
size_t *retlen, u_char *eccbuf, struct nand_oobinfo *oobsel);
#endif
/* Sync */
@@ -179,7 +179,7 @@ int default_mtd_readv(struct mtd_info *mtd, struct kvec *vecs,
#define MTD_WRITEECC(mtd, args...) (*(mtd->write_ecc))(mtd, args)
#define MTD_READOOB(mtd, args...) (*(mtd->read_oob))(mtd, args)
#define MTD_WRITEOOB(mtd, args...) (*(mtd->write_oob))(mtd, args)
-#define MTD_SYNC(mtd) do { if (mtd->sync) (*(mtd->sync))(mtd); } while (0)
+#define MTD_SYNC(mtd) do { if (mtd->sync) (*(mtd->sync))(mtd); } while (0)
#ifdef CONFIG_MTD_PARTITIONS
diff --git a/include/linux/mtd/nand.h b/include/linux/mtd/nand.h
index 9a0108f78c..065e1cb4e4 100644
--- a/include/linux/mtd/nand.h
+++ b/include/linux/mtd/nand.h
@@ -24,7 +24,7 @@
* bat later if I did something naughty.
* 10-11-2000 SJH Added private NAND flash structure for driver
* 10-24-2000 SJH Added prototype for 'nand_scan' function
- * 10-29-2001 TG changed nand_chip structure to support
+ * 10-29-2001 TG changed nand_chip structure to support
* hardwarespecific function for accessing control lines
* 02-21-2002 TG added support for different read/write adress and
* ready/busy line access function
@@ -36,14 +36,14 @@
* CONFIG_MTD_NAND_ECC_JFFS2 is not set
* 08-10-2002 TG extensions to nand_chip structure to support HW-ECC
*
- * 08-29-2002 tglx nand_chip structure: data_poi for selecting
+ * 08-29-2002 tglx nand_chip structure: data_poi for selecting
* internal / fs-driver buffer
* support for 6byte/512byte hardware ECC
* read_ecc, write_ecc extended for different oob-layout
* oob layout selections: NAND_NONE_OOB, NAND_JFFS2_OOB,
* NAND_YAFFS_OOB
* 11-25-2002 tglx Added Manufacturer code FUJITSU, NATIONAL
- * Split manufacturer and device ID structures
+ * Split manufacturer and device ID structures
*
* 02-08-2004 tglx added option field to nand structure for chip anomalities
* 05-25-2004 tglx added bad block table support, ST-MICRO manufacturer id
@@ -120,7 +120,7 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_
#define NAND_STATUS_READY 0x40
#define NAND_STATUS_WP 0x80
-/*
+/*
* Constants for ECC_MODES
*/
@@ -162,12 +162,12 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_
#define NAND_CACHEPRG 0x00000008
/* Chip has copy back function */
#define NAND_COPYBACK 0x00000010
-/* AND Chip which has 4 banks and a confusing page / block
+/* AND Chip which has 4 banks and a confusing page / block
* assignment. See Renesas datasheet for further information */
#define NAND_IS_AND 0x00000020
/* Chip has a array of 4 pages which can be read without
* additional ready /busy waits */
-#define NAND_4PAGE_ARRAY 0x00000040
+#define NAND_4PAGE_ARRAY 0x00000040
/* Options valid for Samsung large page devices */
#define NAND_SAMSUNG_LP_OPTIONS \
@@ -186,8 +186,8 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_
/* Use a flash based bad block table. This option is passed to the
* default bad block table function. */
#define NAND_USE_FLASH_BBT 0x00010000
-/* The hw ecc generator provides a syndrome instead a ecc value on read
- * This can only work if we have the ecc bytes directly behind the
+/* The hw ecc generator provides a syndrome instead a ecc value on read
+ * This can only work if we have the ecc bytes directly behind the
* data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */
#define NAND_HWECC_SYNDROME 0x00020000
@@ -218,7 +218,7 @@ struct nand_chip;
#if 0
/**
* struct nand_hw_control - Control structure for hardware controller (e.g ECC generator) shared among independend devices
- * @lock: protection lock
+ * @lock: protection lock
* @active: the mtd device which holds the controller currently
*/
struct nand_hw_control {
@@ -229,8 +229,8 @@ struct nand_hw_control {
/**
* struct nand_chip - NAND Private Flash Chip Data
- * @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the flash device
- * @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the flash device
+ * @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the flash device
+ * @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the flash device
* @read_byte: [REPLACEABLE] read one byte from the chip
* @write_byte: [REPLACEABLE] write one byte to the chip
* @read_word: [REPLACEABLE] read one word from the chip
@@ -253,7 +253,7 @@ struct nand_hw_control {
* be provided if a hardware ECC is available
* @erase_cmd: [INTERN] erase command write function, selectable due to AND support
* @scan_bbt: [REPLACEABLE] function to scan bad block table
- * @eccmode: [BOARDSPECIFIC] mode of ecc, see defines
+ * @eccmode: [BOARDSPECIFIC] mode of ecc, see defines
* @eccsize: [INTERN] databytes used per ecc-calculation
* @eccbytes: [INTERN] number of ecc bytes per ecc-calculation step
* @eccsteps: [INTERN] number of ecc calculation steps per page
@@ -265,7 +265,7 @@ struct nand_hw_control {
* @phys_erase_shift: [INTERN] number of address bits in a physical eraseblock
* @bbt_erase_shift: [INTERN] number of address bits in a bbt entry
* @chip_shift: [INTERN] number of address bits in one chip
- * @data_buf: [INTERN] internal buffer for one page + oob
+ * @data_buf: [INTERN] internal buffer for one page + oob
* @oob_buf: [INTERN] oob buffer for one eraseblock
* @oobdirty: [INTERN] indicates that oob_buf must be reinitialized
* @data_poi: [INTERN] pointer to a data buffer
@@ -280,20 +280,20 @@ struct nand_hw_control {
* @bbt: [INTERN] bad block table pointer
* @bbt_td: [REPLACEABLE] bad block table descriptor for flash lookup
* @bbt_md: [REPLACEABLE] bad block table mirror descriptor
- * @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial bad block scan
+ * @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial bad block scan
* @controller: [OPTIONAL] a pointer to a hardware controller structure which is shared among multiple independend devices
* @priv: [OPTIONAL] pointer to private chip date
*/
-
+
struct nand_chip {
void __iomem *IO_ADDR_R;
void __iomem *IO_ADDR_W;
-
+
u_char (*read_byte)(struct mtd_info *mtd);
void (*write_byte)(struct mtd_info *mtd, u_char byte);
u16 (*read_word)(struct mtd_info *mtd);
void (*write_word)(struct mtd_info *mtd, u16 word);
-
+
void (*write_buf)(struct mtd_info *mtd, const u_char *buf, int len);
void (*read_buf)(struct mtd_info *mtd, u_char *buf, int len);
int (*verify_buf)(struct mtd_info *mtd, const u_char *buf, int len);
@@ -358,7 +358,7 @@ struct nand_chip {
* @name: Identify the device type
* @id: device ID code
* @pagesize: Pagesize in bytes. Either 256 or 512 or 0
- * If the pagesize is 0, then the real pagesize
+ * If the pagesize is 0, then the real pagesize
* and the eraseize are determined from the
* extended id bytes in the chip
* @erasesize: Size of an erase block in the flash device.
@@ -387,7 +387,7 @@ struct nand_manufacturers {
extern struct nand_flash_dev nand_flash_ids[];
extern struct nand_manufacturers nand_manuf_ids[];
-/**
+/**
* struct nand_bbt_descr - bad block table descriptor
* @options: options for this descriptor
* @pages: the page(s) where we find the bbt, used with option BBT_ABSPAGE
@@ -398,14 +398,14 @@ extern struct nand_manufacturers nand_manuf_ids[];
* @version: version read from the bbt page during scan
* @len: length of the pattern, if 0 no pattern check is performed
* @maxblocks: maximum number of blocks to search for a bbt. This number of
- * blocks is reserved at the end of the device where the tables are
+ * blocks is reserved at the end of the device where the tables are
* written.
* @reserved_block_code: if non-0, this pattern denotes a reserved (rather than
* bad) block in the stored bbt
- * @pattern: pattern to identify bad block table or factory marked good /
+ * @pattern: pattern to identify bad block table or factory marked good /
* bad blocks, can be NULL, if len = 0
*
- * Descriptor for the bad block table marker and the descriptor for the
+ * Descriptor for the bad block table marker and the descriptor for the
* pattern which identifies good and bad blocks. The assumption is made
* that the pattern and the version count are always located in the oob area
* of the first block.
generated by cgit (git 2.34.1) at 2024-12-26 14:17:17 +0000